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Preparation and electronic defect characteristics of pentacene organic field effect transistors



Preparation and electronic defect characteristics of pentacene organic field effect transistors



Macromolecular Research 10(2): 75-79



Organic materials have considerable attention as active semiconductors for device applications such as thin-film transistors (TFTs) and diodes. Pentacene is ap-type organic semiconducting material investigated for TFTs. In this paper, we reported the morphological and electrical characteristics of pentacene TFT films. The pentacene transistors showed the mobility of .8 cm2/Vs and the grains larger than 1 ?m. Deep-level transient spectroscopy (DLTS) measurements were carried out on metal/insulator/organic semiconductor structure devices that had a depletion region at the insulator/organic-semiconductor interface. The duration of the capacitance transient in DLTS signals was several ten of seconds in the pentacene, which was longer than that of inorganic semiconductors such as Si. Based on the DLTS characteristics, the energy levels of hole and electron traps for the pentacene films were approximately .24, 1.8, and .31 eV aboveEv, and .69 eV belowEc.

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Accession: 036162847

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DOI: 10.1007/bf03218293


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