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Anomalous quantum-confined Stark effects in stacked InAs/GaAs self-assembled quantum dots



Anomalous quantum-confined Stark effects in stacked InAs/GaAs self-assembled quantum dots



Physical Review Letters 88(16): 167401



Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs) are predicted to exhibit strong hole localization even with vanishing separation between the dots, and a nonparabolic dependence of the interband transition energy on the electric field, which is not encountered in single SAD structures. Our study based on an eight-band strain-dependent k x p Hamiltonian indicates that this anomalous quantum confined Stark effect is caused by the three-dimensional strain field distribution which influences drastically the hole states in the stacked SAD structures.

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Accession: 045264084

Download citation: RISBibTeXText

PMID: 11955264

DOI: 10.1103/physrevlett.88.167401


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