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Phenomenological description of ion-beam-induced epitaxial crystallization of amorphous silicon



Phenomenological description of ion-beam-induced epitaxial crystallization of amorphous silicon



Physical Review. B, Condensed Matter 41(8): 5235-5242




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Accession: 046973388

Download citation: RISBibTeXText

PMID: 9994384

DOI: 10.1103/physrevb.41.5235


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