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Phenomenological electronic stopping-power model for molecular dynamics and Monte Carlo simulation of ion implantation into silicon



Phenomenological electronic stopping-power model for molecular dynamics and Monte Carlo simulation of ion implantation into silicon



Physical Review. B Condensed Matter 54(23): 17147-17157




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Accession: 046973400

Download citation: RISBibTeXText

PMID: 9985850

DOI: 10.1103/physrevb.54.17147


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