+ Site Statistics
+ Search Articles
+ PDF Full Text Service
How our service works
Request PDF Full Text
+ Follow Us
Follow on Facebook
Follow on Twitter
Follow on LinkedIn
+ Subscribe to Site Feeds
Most Shared
PDF Full Text
+ Translate
+ Recently Requested

Photoemission study of reactive rare-earth/semiconductor interfaces: Tm/GaAs(110) and Yb/GaAs(110)



Photoemission study of reactive rare-earth/semiconductor interfaces: Tm/GaAs(110) and Yb/GaAs(110)



Physical Review. B Condensed Matter 38(15): 10655-10668




Please choose payment method:






(PDF emailed within 0-6 h: $19.90)

Accession: 046979542

Download citation: RISBibTeXText

PMID: 9945921

DOI: 10.1103/physrevb.38.10655


Related references

Photoemission study of the formation of SrF2/GaAs(100) and BaF2/GaAs(100) interfaces. Physical Review. B Condensed Matter 49(3): 1750-1756, 1994

Soft-x-ray photoemission study of chemisorption and Fermi-level pinning at the Cs/GaAs(110) and K/GaAs(110) interfaces. Physical Review. B Condensed Matter 38(11): 7568-7575, 1988

Synchrotron photoemission analysis of semiconductor/electrolyte interfaces by the frozen-electrolyte approach: interaction of HCl in 2-propanol with GaAs(100). Journal of Physical Chemistry. B 110(5): 2293-2301, 2006

Reactions at a rare-earth-GaAs interface: Ce/GaAs(110). Physical Review. B Condensed Matter 31(8): 5290-5296, 1985

4f photoemission from Ce clusters and disordered reaction products at Ce/Si and Ce/GaAs interfaces. Physical Review. B Condensed Matter 31(12): 8291-8294, 1985

Formation of interfaces between In and Au and GaAs(100) studied with soft-x-ray photoemission spectroscopy. Physical Review. B Condensed Matter 45(3): 1273-1283, 1992

Atom profiles of interfaces with polar-angle-dependent photoemission: Au/GaAs(100). Physical Review. B Condensed Matter 35(14): 7417-7422, 1987

Photoemission study of CaF2- and SrF2-GaAs(110) interfaces formed at room temperature. Physical Review. B Condensed Matter 39(17): 12735-12742, 1989

Interfaces of Mg and MgOx films with GaAs(100) substrate studied by synchrotron radiation photoemission. Journal of Electron Spectroscopy and Related Phenomena 101-103: 513-515, 1999

Photoreflectance from GaAs and GaAs/GaAs interfaces. Physical Review. B Condensed Matter 40(12): 8473-8484, 1989

Transmission electron microscopy characterization of Au/Pt/Ti/Pt/GaAs ohmic contacts for high power GaAs/InGaAs semiconductor lasers. Journal of Microscopy 237(3): 347-351, 2010

Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction. Physical Chemistry Chemical Physics 17(10): 7060-7066, 2015

Electronic properties and chemistry of Ti/GaAs and Pd/GaAs interfaces. Physical Review. B Condensed Matter 33(8): 5526-5535, 1986

Microscopic effects at GaAs/Ge(100) molecular-beam-epitaxy interfaces: Synchrotron-radiation photoemission study. Physical Review. B Condensed Matter 31(4): 2146-2156, 1985

Anomalous Hole Transport and Ferromagnetism in Doped with Mn GaAs/InGaAs/GaAs Quantum Well or GaAs/InAs/GaAs Quantum Dot Layer. Nanoscience and Nanotechnology Letters 4(6): 634-640, 2012