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Low-temperature preparation of anatase thin films on tantalum

Low-temperature preparation of anatase thin films on tantalum

Langmuir 22(15): 6570-6577

Titanium dioxide thin films were grown on oxidized Ta surfaces using a cyclic layer-by-layer wet chemistry method: successive-ionic-layer-adsorption-and-reaction (SILAR). Film thicknesses varied monotonically and approximately linearly with the number of cycles. As-grown (AG) films were amorphous and rougher (16.2 nm root-mean-square (rms)) than the Ta substrate (10.2 nm rms). After hydrothermal annealing (AN) at a remarkably low temperature of 393 K, the films exhibited anatase crystallites (10 nm dimensions) and reduced roughness (11.8 nm rms). The atomic composition of both AG and AN films was consistent with that of TiO2 containing no more than 4 atom % carbon. A small Si impurity (<1 atom %) was eliminated by using polypropylene beakers and sample holders in the SILAR steps.

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Accession: 049498414

Download citation: RISBibTeXText

PMID: 16830999

DOI: 10.1021/la060534z

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