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Comparison of structure and performance between extended blue and standard transmission-mode GaAs photocathode modules

Comparison of structure and performance between extended blue and standard transmission-mode GaAs photocathode modules

Applied Optics 50(32): 6140-6145

Extended blue and standard transmission-mode GaAs photocathode modules were prepared, respectively, by metal organic chemical vapor deposition. The experimental reflectivity, transmissivity, and spectral response curves were measured and compared separately. The integral sensitivities are 1980 μA/lm and 2022 μA/lm for both the modules. By use of the revised quantum yield formula, the experimental spectral response curves are fitted to obtain the structure parameters. The fitted results show that the Ga(1-x)Al(x)As window layer with varied aluminum components is beneficial to improve extended blue GaAs photocathode module. In addition, the layer-thickness and aluminum component in the window layer determine the extended blue performance, while the thickness of the GaAs active layer settles the long-waveband performance for the transmission-mode GaAs photocathode module.

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Accession: 052243850

Download citation: RISBibTeXText

PMID: 22083387

DOI: 10.1364/ao.50.006140

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