EurekaMag.com logo
+ Site Statistics
References:
53,214,146
Abstracts:
29,074,682
+ Search Articles
+ Subscribe to Site Feeds
EurekaMag Most Shared ContentMost Shared
EurekaMag PDF Full Text ContentPDF Full Text
+ PDF Full Text
Request PDF Full TextRequest PDF Full Text
+ Follow Us
Follow on FacebookFollow on Facebook
Follow on TwitterFollow on Twitter
Follow on Google+Follow on Google+
Follow on LinkedInFollow on LinkedIn

+ Translate

Preferential growth of short aligned, metallic-rich single-walled carbon nanotubes from perpendicular layered double hydroxide film


Nanoscale 4(7): 2470-2477
Preferential growth of short aligned, metallic-rich single-walled carbon nanotubes from perpendicular layered double hydroxide film
Direct bulk growth of single-walled carbon nanotubes (SWCNTs) with required properties, such as diameter, length, and chirality, is the first step to realize their advanced applications in electrical and optical devices, transparent conductive films, and high-performance field-effect transistors. Preferential growth of short aligned, metallic-rich SWCNTs is a great challenge to the carbon nanotube community. We report the bulk preferential growth of short aligned SWCNTs from perpendicular Mo-containing FeMgAl layered double hydroxide (LDH) film by a facile thermal chemical vapor deposition with CH(4) as carbon source. The growth of the short aligned SWCNTs showed a decreased growth velocity with an initial value of 1.9 nm s(-1). Such a low growth velocity made it possible to get aligned SWCNTs shorter than 1 μm with a growth duration less than 15 min. Raman spectra with different excitation wavelengths indicated that the as-grown short aligned SWCNTs showed high selectivity of metallic SWCNTs. Various kinds of materials, such as mica, quartz, Cu foil, and carbon fiber, can serve as the substrates for the growth of perpendicular FeMoMgAl LDH films and also the growth of the short aligned SWCNTs subsequently. These findings highlight the easy route for bulk preferential growth of aligned metallic-rich SWCNTs with well defined length for further bulk characterization and applications.

(PDF same-day service: $19.90)

Accession: 055116875

PMID: 22373876

DOI: 10.1039/c2nr00043a



Related references

Preferential growth of single-walled carbon nanotubes with metallic conductivity. Science 326(5949): 116-120, 2009

Selective growth of vertically aligned double- and single-walled carbon nanotubes on a substrate at 590 °C. Nanotechnology 19(43): 435601-435601, 2008

Guided growth of large-scale, horizontally aligned arrays of single-walled carbon nanotubes and their use in thin-film transistors. Small 1(11): 1110-1116, 2006

Preferential syntheses of semiconducting vertically aligned single-walled carbon nanotubes for direct use in FETs. Nano Letters 8(9): 2682-2687, 2008

Preferential destruction of metallic single-walled carbon nanotubes by laser irradiation. Journal of Physical Chemistry. B 110(14): 7316-7320, 2006

Preferential elimination of metallic single-walled carbon nanotubes using microwave irradiation. Nanotechnology 20(6): 065707-065707, 2009

p-n homo-junction arrays of aligned single walled carbon nanotubes fabricated by selective patterning of polyethyleneimine film. Nanotechnology 22(38): 385302-385302, 2011

Electrochemistry of polystyrene intercalated vertically aligned single- and double-walled carbon nanotubes on gold electrodes. Electrochemistry Communications 13(11): 1190-1193, 2011

Selective growth of well-aligned semiconducting single-walled carbon nanotubes. Nano Letters 9(2): 800-805, 2009

Growth kinetics of 0.5 cm vertically aligned single-walled carbon nanotubes. Journal of Physical Chemistry. B 111(8): 1907-1910, 2007