+ Site Statistics
+ Search Articles
+ Subscribe to Site Feeds
Most Shared
PDF Full Text
+ PDF Full Text
Request PDF Full Text
+ Follow Us
Follow on Facebook
Follow on Twitter
Follow on LinkedIn
+ Translate
+ Recently Requested

Study the formation mechanism of silicon carbide polytype by silicon carbide nanobelts sintered under high pressure

Study the formation mechanism of silicon carbide polytype by silicon carbide nanobelts sintered under high pressure

Journal of Nanoscience and Nanotechnology 11(11): 9752-9756

In this paper, in order to reveal the formation mechanism of SiC polytype, four SiC specimens sintered under high pressure has been investigated, after being prepared from SiC nanobelts as initial powders. The structure and morphology variation dependence of SiC specimens with temperature and pressure was studied based on experimental data obtained by XRD, SEM, and Raman. The results show that SiC lattice structure and the crystallite size are greatly affected by pressure between 2 and 4 GPa under different sintering temperatures of 800 and 1200 degrees C. At the largest applied pressure and temperature, 4 GPa and 1200 degrees C, 3C-SiC crystal structure can be changed into to R-SiC due to the stress resulted in dislocations instead of planar defects. Based on our results, the multiquantum-well structure based a single one-dimensional nanostructure can be achieved by applying high pressure at certain sintered temperature.

(PDF emailed within 1 workday: $29.90)

Accession: 055981640

Download citation: RISBibTeXText

PMID: 22413287

Related references

Nanorods of silicon carbide from silicon carbide powder by high temperature heat treatment. Journal of Materials Science 46(9): 3052-3059, 2011

Raman modes of 6H polytype of silicon carbide to ultrahigh pressures: A comparison with silicon and diamond. Physical Review Letters 72(26): 4105-4108, 1994

Polytype formation and transformation during the reaction-bonding of silicon carbide. Bulletin de Mineralogie: 1-2, Pages 151-161. 1986., 1986

Study of influence of the removal depth of the silicon modification layer on grating structures in reaction-sintered silicon carbide substrate and improvement method. Applied Optics 57(34): F1-F7, 2019

The wettability of silicon carbide by liquid aluminium: the effect of free silicon in the carbide and of magnesium, silicon and copper alloy additions to the aluminium. Journal of Materials Science 28(10): 2654-2658, 1993

Photo-catalytic deactivation of hazardous sulfate reducing bacteria using palladium nanoparticles decorated silicon carbide: A comparative study with pure silicon carbide nanoparticles. Journal of Photochemistry and Photobiology. B, Biology 187: 113-119, 2018

Atom-probe tomographic analyses of presolar silicon carbide grains and meteoritic nanodiamonds; first results on silicon carbide. Abstracts of Papers Submitted to the Lunar and Planetary Science Conference 41, 2010

Thermal diffusivity of chemically vapour deposited silicon carbide reinforced with silicon carbide or carbon fibres. Journal of Materials Science 20(9): 3201-3212, 1985

Exposure to fibres, crystalline silica, silicon carbide and sulphur dioxide in the norwegian silicon carbide industry. Annals of Occupational Hygiene 52(5): 317-336, 2008

Assessment of exposure to quartz, cristobalite and silicon carbide fibres (whiskers) in a silicon carbide plant. Annals of Occupational Hygiene 49(4): 335-343, 2005

Conversion process of chlorine containing polysilanes into silicon carbide: Part I Synthesis and crosslinking of poly(chloromethyl)silanescarbosilanes and their transformation into inorganic amorphous silicon carbide. Journal of Materials Science 32(5): 1381-1387, 1997

Electrical properties of silicon carbide/silicon rich carbide multilayers for photovoltaic applications. Solar Energy Materials and Solar Cells 135: 29-34, 2015

Joining of sintered silicon carbide ceramics for high-temperature applications. Journal of Materials Science Letters 17(6): 459-461, 1998

Microstructure and high-temperature strength of pressureless-sintered silicon carbide. Journal of Materials Science Letters 14(19): 1327-1328, 1995

Polytype distribution in silicon carbide. Journal of Materials Science 27(7): 1913-1925, 1992