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Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design



Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design



Advanced Materials 28(5): 864-870



The effects of graphene n-doping on a metal-graphene contact are studied in combination with 1D edge contacts, presenting a record contact resistance of 23 Ω μm at room temperature (19 Ω μm at 100 K). This contact scheme is applied to a graphene-perovskite hybrid photodetector, significantly improving its performance (0.6 → 1.8 A W(-1) in photoresponsivity and 3.3 × 10(4) → 5.4 × 10(4) Jones in detectivity).

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Accession: 057851007

Download citation: RISBibTeXText

PMID: 26619053

DOI: 10.1002/adma.201503715


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