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Shallow and low-resistive metallizations to p-type indium gallium arsenide for optoelectronic applications

Ressel, P.; Wang, L.C.; Hartnagel, H.L.; Hao, P.H.; Leech, P.W.; Nebauer, E.; Richter, E.; Trankle, G.; Fritzsche, D.; Kuphal, E.; Osterle, W.

Recent Research Developments in Vacuum Science and Technology (Vol 2 (2000) - Part Ii): 237-266

2000


Accession: 073469157


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