Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy
Li, L.; Han, B.K.; Law, D.; Begarney, M.; Hicks, R.F.
J. Cryst. Growth 195(1-4): 28-33
1998
ISSN/ISBN: 0022-0248
Accession: 075582970
PDF emailed within 1 workday: $29.90
Related References
Begarney, M.J.; Warddrip, M.L.; Kappers, M.J.; Hicks, R.F. 1998: Kinetics of carbon tetrachloride decomposition during the metalorganic vapor-phase epitaxy of gallium arsenide and indium arsenide Journal of Crystal Growth 193(3): 305-315Huang, J.W.; Ryan, J.M.; Bray, K.L.; Kuech, T.F. 1995: Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy J. Electron. Mater 24(11): 1539-1546
Cheng, S.F.; Gao, L.; Woo, R.L.; Pangan, A.; Malouf, G.; Goorsky, M.S.; Wang, K.L.; Hicks, R.F. 2008: Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon Journal of Crystal Growth 310(3): 562-569
Ghosh, C.; Layman, R.L. 1984: Selective area growth of gallium arsenide by metalorganic vapor phase epitaxy Applied Physics Letters 45(11): 1229-1231
Foster, D.F.; Glidewell, C.; Colehamilton, D.J. 1993: Role of gas-phase adducts in the growth of gallium arsenide by metalorganic vapor-phase epitaxy Applied Physics Letters 63(2): 214-215
Foster, D.F.; Glidewell, C.; Colehamilton, D.J. 1994: Probing the mechanisms of growth of gallium arsenide by metalorganic vapor phase epitaxy using experimental and theoretical studies of designed precursors J. Electron. Mater 23(2): 69-74
Sirota, N.N.; Novikov, V.V. 1985: Diagramme de fusibilité du système arséniures de gallium et d'indium-phosphure d'indium - Melting diagram of the system gallium arsenide, indium arsenide, and indium phosphide Zurnal Fiziceskoj Himii 59(4): 829-833
Tanaka, A. 2004: Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide Toxicology and Applied Pharmacology 198(3): 405-411
Lamelas, F.J.; Fuoss, P.H.; Imperatori, P.; Kisker, D.W.; Stephenson, G.B.; Brennan, S. 1992: Gallium arsenide surface reconstruction during organometallic vapor-phase epitaxy Applied Physics Letters 60(21): 2610-2612
Rosner, S.J.; Amano, J.; Lee, J.W.; Fan, J.C.C. 1988: Initial growth of gallium arsenide on silicon by organometallic vapor phase epitaxy Applied Physics Letters 53(12): 1101-1103
Kushibiki, N.; Tsukamoto, M.; Erata, T. 1986: Solid-state high-resoluction NMR studies on gallium arsenide and indium gallium arsenide semiconductors Chemical Physics Letters 129(3): 303-305
Arora, V.K.; Mui, D.S.L.; Morkoc, H. 1987: Mobility degradation and transferred electron effect in gallium arsenide and indium gallium arsenide Ieee Trans. Electron Devices 34(6): 1231-1238
Bobylev, B.A.; Kalukhov, V.A.; Torchinov Hkm, Z.; Chikichev, S.I. 1985: Spectres de photoionisation de niveaux profonds dans l'arséniure de gallium obtenu par épitaxie en phase liquide - Photoionization spectra of deep levels in gallium arsenide produced by liquid-phase epitaxy Fizika i Tehnika Poluprovodnikov 19(2): 244-247
Hoare, R.D.; Pemble, M.E.; Povey, I.M.; Williams, J.O.; Foster, D.F.; Glidewell, C.; Colehamilton, D.J. 1994: The use of hex-5-enylarsine as a chemically designed precursor to probe the mechanisms of the metalorganic vapour phase epitaxy growth of gallium arsenide - consequences for reactor design Journal of Crystal Growth 137(3-4): 347-354
Metaferia, W.; Schulte, K.L.; Simon, J.; Johnston, S.; Ptak, A.J. 2019: Gallium arsenide solar cells grown at rates exceeding 300 µm h -1 by hydride vapor phase epitaxy Nature Communications 10(1): 3361
Tejwani, M.J.; Kanber, H.; Paine, B.M.; Whelan, J.M. 1988: Growth and diffusion of abrupt beryllium-doped profiles in gallium arsenide by organometallic vapor phase epitaxy Applied Physics Letters 53(24): 2411-2413
Astrova, E.V.; Bobrovnikova, I.A.; Tybulewicz, A.; Vilisova, M.D.; Ivleva, O.M.; Lavrenteva, L.G.; Lebedev, A.A.; Teterkina, I.V.; Chaldyshev, V.V.; Chernov, N.A.; Shmartsev, Y.V. 1991: Influence of isovalent doping with indium on the properties of epitaxial gallium arsenide films grown from the vapor phase Soviet Physics. Semiconductors 25(5): 543-546
Kent, A.J.; Akimov, A.V.; Cavill, S.A.; Bellingham, R.J.; Henini, M. 2002: Phonon emission by optically pumped indium arsenide quantum dots in gallium arsenide Physica, B Condens. Matter 316-17: 198-201
Besomi, P.; Degani, J.; Dutta, N.K.; Wagner, W.R.; Nelson, R.J. 1984: High quality indium gallium arsenide phosphide double heterostructure material grown by the near equilibrium liquid-phase-epitaxy technique Journal of Applied Physics 56(10): 2879-2882
Omura, M.; Hirata, M.; Tanaka, A.; Zhao, M.; Makita, Y.; Inoue, N.; Gotoh, K.; Ishinishi, N. 1996: Testicular toxicity evaluation of arsenic-containing binary compound semiconductors, gallium arsenide and indium arsenide, in hamsters Toxicology Letters 89(2): 123-129