Mobility degradation and transferred electron effect in gallium arsenide and indium gallium arsenide
Arora, V.K.; Mui, D.S.L.; Morkoc, H.
Ieee Trans. Electron Devices 34(6): 1231-1238
1987
ISSN/ISBN: 0018-9383
Accession: 076652268
PDF emailed within 1 workday: $29.90
Related References
Sirota, N.N.; Novikov, V.V. 1985: Diagramme de fusibilité du système arséniures de gallium et d'indium-phosphure d'indium - Melting diagram of the system gallium arsenide, indium arsenide, and indium phosphide Zurnal Fiziceskoj Himii 59(4): 829-833Myers, L.O.A.; Spencer, M.G.; Griffin, J.A. 1992: A comparative study of the noise performance of aluminum-gallium-arsenide/gallium-arsenide high electron mobility transistors with and without superconducting gate electrodes IEEE Electron Device Letters 13(5): 273-275
Kushibiki, N.; Tsukamoto, M.; Erata, T. 1986: Solid-state high-resoluction NMR studies on gallium arsenide and indium gallium arsenide semiconductors Chemical Physics Letters 129(3): 303-305
Tanaka, A. 2004: Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide Toxicology and Applied Pharmacology 198(3): 405-411
Hawker, P; Kent, A J; Hughes, O H; Challis, L J 1992: Changeover from acoustic to optic mode phonon emission by a hot two-dimensional electron gas in the gallium arsenide/aluminium gallium arsenide heterojunction Semiconductor Science and Technology 7(3b): B29-B32
Strong, W.H.; Forbes, D.V.; Hubbard, S.M. 2014: Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix Materials Science in Semiconductor Processing 25: 76-83
Hawker, P.; Kent, A.J.; Henini, M.; Hughes, O.H. 1989: Phonon emission by a hot two dimensional electron gas at the gallium arsenide/aluminium gallium arsenide interface Solid-State Electron 32(12): 1755-1759
Kent, A.J.; Akimov, A.V.; Cavill, S.A.; Bellingham, R.J.; Henini, M. 2002: Phonon emission by optically pumped indium arsenide quantum dots in gallium arsenide Physica, B Condens. Matter 316-17: 198-201
Li, L.; Han, B.K.; Law, D.; Begarney, M.; Hicks, R.F. 1998: Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy J. Cryst. Growth 195(1-4): 28-33
Omura, M.; Tanaka, A.; Hirata, M.; Zhao, M.; Makita, Y.; Inoue, N.; Gotoh, K.; Ishinishi, N. 1996: Testicular toxicity of gallium arsenide, indium arsenide, and arsenic oxide in rats by repetitive intratracheal instillation Fundamental and Applied Toxicology: Official Journal of the Society of Toxicology 32(1): 72-78
Begarney, M.J.; Warddrip, M.L.; Kappers, M.J.; Hicks, R.F. 1998: Kinetics of carbon tetrachloride decomposition during the metalorganic vapor-phase epitaxy of gallium arsenide and indium arsenide Journal of Crystal Growth 193(3): 305-315
Omura, M.; Hirata, M.; Tanaka, A.; Zhao, M.; Makita, Y.; Inoue, N.; Gotoh, K.; Ishinishi, N. 1996: Testicular toxicity evaluation of arsenic-containing binary compound semiconductors, gallium arsenide and indium arsenide, in hamsters Toxicology Letters 89(2): 123-129
Prohaska, T.; Friedbacher, G.; Grasserbauer, M.; Nickel, H.; Losch, R.; Schlapp, W. 1995: In situ investigation of aluminum gallium arsenide/gallium arsenide multilayer structures under inert and reactive media by atomic force microscopy Analytical Chemistry 67(9): 1530-1535
Scherer, A.; Craighead, H.G.; Beebe, E.D. 1987: Gallium arsenide and aluminum gallium arsenide reactive ion etching in boron trichloride/argon mixtures Journal of Vacuum Science and Technology. B. Microelectronics Processing and Phenomena 5(6): 1599-1605
Shichi, H.; Ogawa, T.; Adachi, T.; Akai, T.; Hirano, M.; Ihara, A.; Kamejima, T.; Koyama, H.; Maruo, T.; Matsunaga, H.; Nakamura, T.; Obata, T.; Kurosawa, S.; Okuno, K.; Shimanuki, Y.; Tachikawa, I.; Takase, H.; Tanigaki, T.; Tsukamoto, K.; Homma, Y. 1994: Secondary ion mass spectrometry round-robin study of impurity analysis in gallium arsenide using uniformly-doped standard gallium arsenide specimens Surface and Interface Analysis 21(1): 23-31
Friedbacher, G.; Hansma, P.K.; Schwarzbach, D.; Grasserbauer, M.; Nickel, H. 1992: Investigation of aluminum gallium arsenide/gallium arsenide superlattices by atomic force microscopy Analytical Chemistry 64(17): 1760-1762
Saxena, A.K. 2001: Defect levels in n-type gallium arsenide and gallium aluminum arsenide layers Physica Status Solidi. A. Applied Research 183(2): 281-297
Tanaka, A.; Hirata, M.; Omura, M.; Zhao, M.; Makita, Y.; Yamazaki, K.; Inoue, N.; Gotoh, K. 2000: Comparative study of the toxic effects of gallium arsenide, indium arsenide and arsenic trioxide following intratracheal instillations to the lung of Syrian golden hamsters Fukuoka Igaku Zasshi 91(1): 21-33
Nash, K J; Skolnick, M S; Bass, S J 1987: Electron-phonon interactions in indium gallium arsenide Semiconductor Science and Technology 2(6): 329-336
Yang, S.U.; Choi, S.H.; Lee, J.; Kim, J.; Jung, W.S.; Yu, H.Y.; Roh, Y.; Park, J.H. 2013: Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode Journal of Alloys and Compounds 561: 228-230