Role of gas-phase adducts in the growth of gallium arsenide by metalorganic vapor-phase epitaxy
Foster, D.F.; Glidewell, C.; Colehamilton, D.J.
Applied Physics Letters 63(2): 214-215
1993
ISSN/ISBN: 0003-6951 Accession: 077655161
PDF emailed within 1 workday: $29.90
Related References
Ghosh, C.; Layman, R.L. 1984: Selective area growth of gallium arsenide by metalorganic vapor phase epitaxy Applied Physics Letters 45(11): 1229-1231Law, D.C.; Li, L.; Begarney, M.J.; Hicks, R.F. 2000: Analysis of the growth modes for gallium arsenide metalorganic vapor-phase epitaxy Journal of Applied Physics 88(1): 508-512
Li, L.; Han, B.K.; Law, D.; Begarney, M.; Hicks, R.F. 1998: Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy J. Cryst. Growth 195(1-4): 28-33
Begarney, M.J.; Warddrip, M.L.; Kappers, M.J.; Hicks, R.F. 1998: Kinetics of carbon tetrachloride decomposition during the metalorganic vapor-phase epitaxy of gallium arsenide and indium arsenide Journal of Crystal Growth 193(3): 305-315
Foster, D.F.; Glidewell, C.; Colehamilton, D.J. 1994: Probing the mechanisms of growth of gallium arsenide by metalorganic vapor phase epitaxy using experimental and theoretical studies of designed precursors J. Electron. Mater 23(2): 69-74
Cheng, S.F.; Gao, L.; Woo, R.L.; Pangan, A.; Malouf, G.; Goorsky, M.S.; Wang, K.L.; Hicks, R.F. 2008: Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon Journal of Crystal Growth 310(3): 562-569
Foster, D.F.; Glidewell, C.; Colehamilton, D.J.; Povey, I.M.; Hoare, R.D.; Pemble, M.E. 1994: Do gas phase adducts form during metalorganic vapour phase epitaxial growth of gallium arsenide? J. Cryst. Growth 145(1-4): 104-112
Adamson, S.D.; Han, B.K.; Hicks, R.F. 1996: Site‐specific reaction kinetics for gallium arsenide metalorganic vapor‐phase epitaxy Applied Physics Letters 69(21): 3236-3238
Huang, J.W.; Kuech, T.F.; Anderson, T.J. 1995: Oxygen‐based deep levels in metalorganic vapor phase epitaxy indium gallium arsenide Applied Physics Letters 67(8): 1116-1118
Huang, J.W.; Ryan, J.M.; Bray, K.L.; Kuech, T.F. 1995: Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy J. Electron. Mater 24(11): 1539-1546
Begarney, M.J.; Li, L.; Han, B.; Law, D.C.; Li, C.H.; Yoon, H.; Goorsky, M.S.; Hicks, R.F. 1999: Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy Journal of Applied Physics 86(1): 318-324
Rosner, S.J.; Amano, J.; Lee, J.W.; Fan, J.C.C. 1988: Initial growth of gallium arsenide on silicon by organometallic vapor phase epitaxy Applied Physics Letters 53(12): 1101-1103
Theodoropoulos, C.; Mountziaris, T.J.; Moffat, H.K.; Han, J. 2000: Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy Journal of Crystal Growth 217(1-2): 65-81
Hoare, R.D.; Pemble, M.E.; Povey, I.M.; Williams, J.O.; Foster, D.F.; Glidewell, C.; Colehamilton, D.J. 1994: The use of hex-5-enylarsine as a chemically designed precursor to probe the mechanisms of the metalorganic vapour phase epitaxy growth of gallium arsenide - consequences for reactor design Journal of Crystal Growth 137(3-4): 347-354
Hiramatsu, K.; Matsushima, H.; Shibata, T.; Kawagachi, Y.; Sawaki, N. 1999: Selective area growth and epitaxial lateral overgrowth of Ga N by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy Materials Science and Engineering: B59(1-3): 104-111
Hiramatsu, K.; Matsushima, H.; Shibata, T.; Kawagachi, Y.; Sawaki, N. 1999: Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy European Materials Research Society 1998 Spring Meeting, Symposium L: Nitrides and Related Wide Band Gap Materials 59(1-3): 104-111
Collazo, R.; Mita, S.; Aleksov, A.; Schlesser, R.; Sitar, Z. 2006: Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers J. Cryst. Growth 287(2): 586-590
Tejwani, M.J.; Kanber, H.; Paine, B.M.; Whelan, J.M. 1988: Growth and diffusion of abrupt beryllium-doped profiles in gallium arsenide by organometallic vapor phase epitaxy Applied Physics Letters 53(24): 2411-2413
Rodak, L.E.; Korakakis, D. 2011: Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique Journal of Electronic Materials 40(4): 388-393
Ueda, O.; Hoshino, M.; Takechi, M.; Ozeki, M.; Kato, T.; Matsumoto, T. 1990: Comparative study of atomic ordering and alloy clustering in InGaP crystals grown by metalorganic vapor phase epitaxy, chloride-vapor phase eptaxy, and liquid phase epitaxy Journal of Applied Physics 68(8): 4268-4271