Selective area growth of gallium arsenide by metalorganic vapor phase epitaxy
Ghosh, C.; Layman, R.L.
Applied Physics Letters 45(11): 1229-1231
1984
ISSN/ISBN: 0003-6951 Accession: 077720308
PDF emailed within 1 workday: $29.90
Related References
Cheng, S.F.; Gao, L.; Woo, R.L.; Pangan, A.; Malouf, G.; Goorsky, M.S.; Wang, K.L.; Hicks, R.F. 2008: Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon Journal of Crystal Growth 310(3): 562-569Law, D.C.; Li, L.; Begarney, M.J.; Hicks, R.F. 2000: Analysis of the growth modes for gallium arsenide metalorganic vapor-phase epitaxy Journal of Applied Physics 88(1): 508-512
Foster, D.F.; Glidewell, C.; Colehamilton, D.J. 1993: Role of gas-phase adducts in the growth of gallium arsenide by metalorganic vapor-phase epitaxy Applied Physics Letters 63(2): 214-215
Li, L.; Han, B.K.; Law, D.; Begarney, M.; Hicks, R.F. 1998: Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy J. Cryst. Growth 195(1-4): 28-33
Begarney, M.J.; Warddrip, M.L.; Kappers, M.J.; Hicks, R.F. 1998: Kinetics of carbon tetrachloride decomposition during the metalorganic vapor-phase epitaxy of gallium arsenide and indium arsenide Journal of Crystal Growth 193(3): 305-315
Foster, D.F.; Glidewell, C.; Colehamilton, D.J. 1994: Probing the mechanisms of growth of gallium arsenide by metalorganic vapor phase epitaxy using experimental and theoretical studies of designed precursors J. Electron. Mater 23(2): 69-74
Hiramatsu, K.; Matsushima, H.; Shibata, T.; Kawagachi, Y.; Sawaki, N. 1999: Selective area growth and epitaxial lateral overgrowth of Ga N by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy Materials Science and Engineering: B59(1-3): 104-111
Hiramatsu, K.; Matsushima, H.; Shibata, T.; Kawagachi, Y.; Sawaki, N. 1999: Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy European Materials Research Society 1998 Spring Meeting, Symposium L: Nitrides and Related Wide Band Gap Materials 59(1-3): 104-111
Adamson, S.D.; Han, B.K.; Hicks, R.F. 1996: Site‐specific reaction kinetics for gallium arsenide metalorganic vapor‐phase epitaxy Applied Physics Letters 69(21): 3236-3238
Huang, J.W.; Kuech, T.F.; Anderson, T.J. 1995: Oxygen‐based deep levels in metalorganic vapor phase epitaxy indium gallium arsenide Applied Physics Letters 67(8): 1116-1118
Tsuchiya, T.; Shimizu, J.; Shirai, M.; Aoki, M. 2005: InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy Journal of Crystal Growth 276(3-4): 439-445
Shen, X.M.; Feng, G.; Zhang, B.S.; Duan, L.H.; Wang, Y.T.; Yang, H. 2003: Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy Journal of Crystal Growth 252(1-3): 9-13
Sato, T.; Motohisa, J.; Noborisaka, J.; Hara, S.; Fukui, T. 2008: Growth of InGaAs nanowires by selective-area metalorganic vapor phase epitaxy Journal of Crystal Growth 310(7-9): 2359-2364
Huang, J.W.; Ryan, J.M.; Bray, K.L.; Kuech, T.F. 1995: Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy J. Electron. Mater 24(11): 1539-1546
Begarney, M.J.; Li, L.; Han, B.; Law, D.C.; Li, C.H.; Yoon, H.; Goorsky, M.S.; Hicks, R.F. 1999: Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy Journal of Applied Physics 86(1): 318-324
Oh, H.; Sugiyama, M.; Nakano, Y.; Shimogaki, Y. 2003: Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy: Gas-Phase Concentration Analysis Japanese Journal of Applied Physics 42(Part 2, No. 4A): L359-L361
Tanbunek, T.; Chen, Y.K.; Chu, S.N.G.; Grenko, J.A.; Byrne, E.K.; Johnson, J.E.; Logan, R.A.; Tate, A.; Sergent, A.M.; Wecht, K.W.; Sciortine, P.F. 1994: Integrated DFB-DBR laser modulator grown by selective area metalorganic vapor phase epitaxy growth technique J. Cryst. Growth 145(1-4): 902-906
Oh, H.; Sugiyama, M.; Nakano, Y.; Shimogaki, Y. 2003: Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of Ga as through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth Japanese Journal of Applied Physics 42(Part 1, No. 10): 6284-6291
Le Bellégo, Y.; Tomioka, S.; Kawai, H. 1994: Ga as vertical and lateral growth enhancement using trimethylgallium and trimethylarsenic in selective area metalorganic vapor phase epitaxy on a (111) B substrate Journal of Crystal Growth 145(1-4): 297-301
Le Bellego, Y.; Tomioka, S.; Kawai, H. 1994: GaAs vertical and lateral growth enhancement using trimethylgallium and trimethylarsenic in selective area metalorganic vapor phase epitaxy on a (111)>B substrate J. Cryst. Growth 145(1-4): 297-301