The use of hex-5-enylarsine as a chemically designed precursor to probe the mechanisms of the metalorganic vapour phase epitaxy growth of gallium arsenide - consequences for reactor design
Hoare, R.D.; Pemble, M.E.; Povey, I.M.; Williams, J.O.; Foster, D.F.; Glidewell, C.; Colehamilton, D.J.
Journal of Crystal Growth 137(3-4): 347-354
1994
ISSN/ISBN: 0022-0248 Accession: 078474486
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