Dependence of the properties of (Srx Ti1−x) O3 thin films deposited by plasma-enhanced metal–organic chemical vapor deposition on electron cyclotron resonance plasma
Lee, J.S.; Song, H.W.; Jun, B.; Kwack, D.H.; Yu, B.G.; Jiang, Z.; No, K.
Thin Solid Films 301(1-2): 154-161
1997
ISSN/ISBN: 0040-6090 Accession: 082927767
PDF emailed within 1 workday: $29.90
Related References
Kim, S.T.; Kim, J.W.; Jung, S.W.; Shin, J.S.; Ahn, S.T.; Lee, W.J. 1996: Electrical properties of PZT thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition Materials Chemistry and Physics 45(2): 155-158Barve, S.A.; Jagannath,; Mithal, N.; Deo, M.N.; Biswas, A.; Mishra, R.; Kishore, R.; Bhanage, B.M.; Gantayet, L.M.; Patil, D.S. 2011: Effects of precursor evaporation temperature on the properties of the yttrium oxide thin films deposited by microwave electron cyclotron resonance plasma assisted metal organic chemical vapor deposition Thin Solid Films 519(10): 3011-3020
Shin, J.H.; Kim, M.; Seo, S.; Lee, C. 1998: Composition dependence of room temperature 1.54 μm Er3+ luminescence from erbium-doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition Applied Physics Letters 72(9): 1092-1094
Lapeyrade, M.; Besland, M.P.; Meva'a, C.; Sibaï, A.; Hollinger, G. 1999: Silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition Journal of Vacuum Science-Technology A: Vacuum, Surfaces, and Films 17(2): 433-444
Sundaram, K.B.; Sah, R.E.; Baumann, H.; Balachandran, K.; Todi, R.M. 2003: Wet etching studies of silicon nitride thin films deposited by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition Microelectronic Engineering 70(1): 109-114
Baumann, H.; Sah, R.E. 2005: Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique Journal of Vacuum Science-Technology A: Vacuum, Surfaces, and Films 23(3): 545-550
Kim, S.P.; Choi, S.K. 2000: The origin of intrinsic stress and its relaxation for SiOF thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition Thin Solid Films 379(1-2): 259-264
Biasotto, C.; Diniz, J.A.; Daltrini, A.M.; Moshkalev, S.A.; Monteiro, M.J.R. 2008: Silicon nitride thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition for micromechanical system applications Thin Solid Films 516(21): 7777-7782
Andosca, R.G.; Varhue, W.J.; Adams, E. 1992: Silicon dioxide films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition Journal of Applied Physics 72(3): 1126-1132
Kim, J.; Jun, B.; Lee, E.; Hwang, C.; Lee, W. 1997: A comparative study on the properties of Ti N films prepared by chemical vapor deposition enhanced by r.f. plasma and by electron cyclotron resonance plasma Thin Solid Films 292(1-2): 124-129
Il, K.I.M.; Jongseok, K.I.M.; Ohseung, K.W.O.N.; Sungtae, A.H.N.; Chun, J.S.; Wonjong, L.E.E. 1995: Effects of annealing in O2 and N2 on the electrical properties of tantalum oxide thin films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition Journal of Electronic Materials 24(10): 1435-1441
Bae, S.; Kalkan, A.K.; Cheng, S.; Fonash, S.J. 1998: Characteristics of amorphous and polycrystalline silicon films deposited at 120 °C by electron cyclotron resonance plasma-enhanced chemical vapor deposition Journal of Vacuum Science-Technology A: Vacuum, Surfaces, and Films 16(3): 1912-1916
Lee, J.; Shim, C.; Park, S.; Jung, D.; Park, S. 1997: A possible method for large area deposition of a-Si:H thin films using electron cyclotron resonance plasma-enhanced chemical vapor deposition Thin Solid Films 295(1-2): 67-72
Kim, S.P.; Choi, S.K.; Park, Y.; Chung, I. 2002: Effect of N2O plasma treatment on the stabilization of water absorption in fluorinated silicon-oxide thin films fabricated by electron-cyclotron-resonance plasma-enhanced chemical-vapor deposition Applied Physics Letters 80(10): 1728-1730
Bae, S.; Fonash, S.J. 1999: Assessment of as-deposited microcrystalline silicon films on polymer substrates using electron cyclotron resonance-plasma enhanced chemical vapor deposition Journal of Vacuum Science-Technology A: Vacuum, Surfaces, and Films 17(4): 1987-1990
Jeon, Y.; Lee, H.; Joo, S. 1994: I‐Vcharacteristics of electron‐cyclotron‐resonance plasma‐enhanced chemical‐vapor‐deposition silicon nitride thin films Journal of Applied Physics 75(2): 979-984
Joo, J.; Quan, Y.C.; Jung, D. 2000: Effects of plasma power on the properties of low-k polymerlike organic thin films deposited by plasma-enhanced chemical vapor deposition using the toluene precursor Journal of Materials Research 15(1): 228-230
Shin, J.H.; Kim, M. 1999: Deposition and 1.54 μm Er3+ luminescent properties of erbium-doped hydrogenated amorphous silicon thin films by electron cyclotron resonance plasma enhanced chemical vapor deposition of Si H4 with concurrent sputtering of erbium Journal of Vacuum Science-Technology A: Vacuum, Surfaces, and Films 17(6): 3230-3234
Ye, C.; Ning, Z.; Shen, M.; Cheng, S.; Gan, Z. 1998: Microstructure and dielectric properties of silicon nitride films deposited by electron cyclotron resonance plasma chemical vapor deposition Journal of Applied Physics 83(11): 5978-5984
Ye, C.; Ning, Z.; Shen, M.; Wang, H.; Gan, Z. 1997: Dielectric properties of silicon nitride films deposited by microwave electron cyclotron resonance plasma chemical vapor deposition at low temperature Applied Physics Letters 71(3): 336-337